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 Ordering number : ENN7302
FTD7003
P-Channel Silicon MOSFET
FTD7003
High-Speed Switching Applications
Features
* * * *
Package Dimensions
unit : mm 2155A
[FTD7003]
0.65
8
5
0.5 4.5 6.4
0.95
Low ON-resistance. 1.8V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting.
3.0
0.425
1
0.25
4
(0.95)
1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Conditions
0.1
1.0
Ratings -12 8.5 --6 -30 1.4 1.6 150 --55 to +150
Unit V V A A W W C C
Mounted on a ceramic board (1200mm2!0.8mm) 1unit PW10s Mounted on a ceramic board (1200mm2!0.8mm) PW10s
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-12V, VGS=0 VGS=6.8V, VDS=0 VDS=-6V, ID=--1mA VDS=-6V, ID=--6A Ratings min --12 --10 10 --0.3 12.6 18 --1.0 typ max Unit V A A V S
Marking : D7003
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1002 TS IM TA-3691 No.7302-1/4
FTD7003
Continued from preceding page.
Parameter Symbol RDS(on) 1 RDS(on) 2 RDS(on) 3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--6A, VGS=--4.5V ID=--3A, VGS=--2.5V ID=--1A, VGS=--1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--6V, VGS=--4.5V, ID=-6A VDS=--6V, VGS=--4.5V, ID=-6A VDS=--6V, VGS=--4.5V, ID=-6A IS=--6A, VGS=0 Ratings min typ 20 29 40 2100 580 500 20 380 220 230 28 2.5 6.5 --0.83 --1.5 max 25 40 60 Unit m m m pF pF pF ns ns ns ns nC nC nC V
Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Switching Time Test Circuit
VIN 0V --4.5V VIN VDD= --6V ID= --6A RL=1
Electrical Connection
D2 S2 S2 G2
D
PW=10s D.C.1%
VOUT
G
P.G
50
FTD7003
S
D1 S1
--6
S1 G1
ID -- VDS
V
--2. 5V 8V
--6
ID -- VGS
VDS= --6V
--3.0
--1 .
--4.5V --3.5V
Drain Current, ID -- A
--1
.5
--5
V
--5
--4
Drain Current, ID -- A
--4
--3
--3
Ta= 75 C
0 --0.2 --0.4 --0.6 --0.8
--2
--2
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 IT04621
0 --1.0 --1.2 --1.4
Drain-to-Source Voltage, VDS -- V
80
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
70
--25 C
--1
VGS= --1.0V
--1
25C
IT04622
RDS(on) -- Ta
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
70 60
Static Drain-to-Source On-State Resistance, RDS(on) -- m
60
--3A
50 40 30 20 10 0 0 --1
50
ID= --6A
40
--1A
30
20
--1.8V V S= --1A, G I D= V = --2.5 3A, V GS I D= ---4.5V , V GS= I D= --6A
10 0 --60
--2
--3
--4
--5
--6
--7
--8
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT04623
Ambient Temperature, Ta -- C
IT04624
No.7302-2/4
FTD7003
5
yfs -- ID
VDS= --6V
Forward Transfer Admittance, yfs -- S
3
--10 7 5 3 2
IF -- VSD
VGS=0
Forward Current, IF -- A
2
C 25
10 7 5 3 2
--0.1 7 5 3 2
25 C
Ta =
1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 --10 IT04625 7
--0.01 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
--0.001 --0.2
Drain Current, ID -- A
7 5
SW Time -- ID
td (off)
Diode Forward Voltage, VSD -- V
7 5
--25
C
C -25 =Ta
75
C
75 C
--1.0 7 5 3 2
IT04626
Ciss, Coss, Crss -- VDS
VDD= --6V VGS= --4.5V Ciss, Coss, Crss -- pF
f=1MHz
Switching Time, SW Time -- ns
3 2
tf
3
Ciss
2
100 7 5 3 2
tr
1000 7 5
Coss
Crss
td(on)
3
10 --0.1
2 2 3 5 7 --1.0 2 3 5
Drain Current, ID -- A
--4.5 --4.0
--10 IT04627 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
7
0
--2
--4
--6
--8
--10
--12 IT04628
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
VDS= --6V ID= --6A Drain Current, ID -- A
ASO
IDP= --30A ID= --6A
10 0m
10
Gate-to-Source Voltage, VGS -- V
<10s 1m s
ms
--3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 5 10 15 20 25 30 IT04629
s
DC
10
op
s
era
tio
n
--0.01 --0.01
Ta=25C Single pulse Mounted on a ceramic board(1200mm2!0.8mm)
2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Total Gate Charge, Qg -- nC
2.0
PD -- Ta
Mounted on a ceramic board(1200mm2!0.8mm)(PW10s)
Drain-to-Source Voltage, VDS -- V
5 7 --10 2 IT04630
Allowable Power Dissipation, PD -- W
1.6 1.5 1.4
1.0
To ta
1u nit
ld iss ip
ati
on
0.5
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT04631
No.7302-3/4
FTD7003
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2002. Specifications and information herein are subject to change without notice.
PS No.7302-4/4


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